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In Stock

1HN04CH-TL-W 1HN04CH-TL-W

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id : 2.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 15pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-CPH
Package / Case : TO-236-3, SC-59, SOT-23-3
0
3295 in stock

1HP04CH-TL-W 1HP04CH-TL-W

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 18 Ohm @ 80mA, 10V
Vgs(th) (Max) @ Id : 2.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-CPH
Package / Case : TO-236-3, SC-59, SOT-23-3
0
8683 in stock

2N6660 2N6660

Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 24V
FET Feature : -
Power Dissipation (Max) : 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
510 in stock

2N6660 2N6660

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660-2 2N6660-2

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660-E3 2N6660-E3

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660JTVP02 2N6660JTVP02

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660JTX02 2N6660JTX02

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660JTXL02 2N6660JTXL02

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660JTXP02 2N6660JTXP02

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6660JTXV02 2N6660JTXV02

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-205AD (TO-39)
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock

2N6661 2N6661

Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock