CDM22010-650 SL
CDM22010-650 SL
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 1168pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 156W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Availability: 629 in stock
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