Central Semiconductor
- Since 1974, Central Semiconductor has manufactured innovative discrete semiconductors used in electronic products worldwide. Devices currently include standard and custom small signal transistors, bipolar power transistors, MOSFETs, diodes, rectifiers, protection devices, current limiting diodes, bridge rectifiers, thyristors, and silicon carbide devices. Central’s devices are available in industry standard surface mount and through-hole packages, bare die, TLMs (Tiny Leadless Modules™), and MDMs (Multi Discrete Modules™). Central has earned a reputation as a manufacturer of the highest quality products consistently delivered on-time, and a provider of exceptional value-added services.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 1168pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 156W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
629 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23.05nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 763pF @ 100V
FET Feature : -
Power Dissipation (Max) : 25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FP
Package / Case : TO-220-3 Full Pack
0
595 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 450 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 52.4nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 1090pF @ 100V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FP
Package / Case : TO-220-3 Full Pack
0
385 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.7 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17.4nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 705pF @ 25V
FET Feature : -
Power Dissipation (Max) : 48W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FP
Package / Case : TO-220-3 Full Pack
0
981 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 950 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 24.3nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 110W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
885 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 24.45nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 1110pF @ 25V
FET Feature : -
Power Dissipation (Max) : 57W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FP
Package / Case : TO-220-3 Full Pack
0
709 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.8 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11.3nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 415pF @ 25V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
2445 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 950 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11.59nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 328pF @ 100V
FET Feature : -
Power Dissipation (Max) : 38W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
2360 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.7 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11.4nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 463pF @ 25V
FET Feature : -
Power Dissipation (Max) : 620mW (Ta), 77W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
2447 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 580 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 100V
FET Feature : -
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
2458 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16.8nC @ 10V
Vgs (Max) : 30V
Input Capacitance (Ciss) (Max) @ Vds : 754pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.12W (Ta), 140W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
2250 in stock
Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.57nC @ 4.5V
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 9pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : -65°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-883
Package / Case : SC-101, SOT-883
0
7738 in stock
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